Dan is currently competing in the 33rd World Championship of the International Correspondence Chess Federation (ICCF), start date Nov. 20, 2022. Dan was the 8th American to earn the International Correspondence Chess GrandMaster title, played Board 1 for the United States Correspondence Chess Olympics team in the 15th Olympiad Final, Board 2 in the 20th and 21st Olympiad Finals, and Board 3 in the 14th and 18th Olympiad finals. He finished first in the Category 15 GER/Pirs10/A, 10 Jahre Schachschule Pirs in Deutschland Gruppe A tournament and Category 13 ESP/MG1/A, I Magistral AEAC - Grupo A tournament, and 8th in the 18th International Correspondence Chess Championship.


Research Group:

Radiation Effects and Reliability Group/Institute for Space and Defense Electronics at Vanderbilt University


This is a recent review article on radiation effects, border traps, and 1/f noise: https://ieeexplore.ieee.org/abstract/document/8984269. The following review articles may also be of interest: Radiation Effects in AlGaN/GaN HEMTs,  Radiation Effects in the Post-Moore World, and Citation Impact of the Outstanding Conference Papers of the IEEE NSREC. Short articles from the IEEE NPSS and IEEE EDS newsletters on the occasion of the 75th anniversary of the invention of the transistor may also be of interest. Links are here:  NPSS   EDS


Research Interests:

Effects of ionizing radiation on microelectronic devices & materials.

Origin(s) of 1/f noise in semiconductors, semiconductor devices, and metals.

Defects, reliability, radiation response of SiC, GaN, and other compound semiconductor devices

Radiation hardness assurance test methods.

Charge trapping in silicon dioxide, and interface-trap generation.

Radiation effects modeling and simulation.

Novel microelectronic materials, including silicon-on-insulator materials.

Electronics for high-radiation and high-temperature environments.

Advanced microelectronic processing/characterization, including ultrathin oxides & alternative dielectrics.

Thermally stimulated current methods to profile defects in insulators.



Ph. D., Solid State Physics, Purdue University, May 1984           

M. S., Experimental Physics, Purdue University, August 1981

B. S., Physics and Applied Math, Purdue University, May 1980


Contact Information:


Vanderbilt University

VU Station B #351824

2301 Vanderbilt Place

Nashville, TN 37235


Vanderbilt University

400 24th Ave. S.

Featheringill Hall, Room 236

Nashville, TN 37212


(615) 322-2498


(615) 343-6702

E-mail (Vanderbilt)


E-mail (Home)



Professional Memberships and Activities:

Fellow, IEEE

Fellow, The American Physical Society

Fellow, American Association for the Advancement of Science

Senior Editor, Radiation Effects, IEEE Trans. Nucl. Sci.

Vice-Chair, Publications, IEEE NPSS Radiation Effects Committee

Distinguished Lecturers Chair, IEEE NPSS

Former Chair (2005), APS Forum on Industrial and Applied Physics

Sigma Pi Sigma, Phi Beta Kappa


Honors and Awards:

IEEE Nuclear and Plasma Sciences Society, Merit Award, 2009

 Purdue University, Distinguished Science Alumnus, 2007

 Discover Magazine (1998), R&D Magazine R&D 100 (1997) and Industry Week Technology of Year (1997) Awards, for co-invention of protonic nonvolatile field effect transistor memory (patent issued 11/3/1998).

 More than 20 Outstanding/Meritorious Conference Paper Awards for IEEE Conferences on Nuclear and Space Radiation Effects and Conferences on Hardened Electronics and Radiation Technology.

 Named Distinguished Member of the Technical Staff, Sandia National Laboratories, 1990

 Lark-Horovitz Award, Purdue University, 1984.


Biographical Information


Daniel M. Fleetwood received his B. S., M. S., and Ph. D. degrees in Physics from Purdue University in 1980, 1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1999 he accepted a position as Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. In 2000, he was also named a Professor of Physics, in July 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and from June 1, 2003, through June 30, 2020, he was Chair of the Electrical Engineering and Computer Science Department. Since 2009, he is appointed Landreth Chair of Engineering. Dan is the author of approximately 600 publications on radiation effects in microelectronics, low-frequency noise, and defects in microelectronic devices and materials, 13 of which have been recognized with Outstanding Paper Awards. These papers have been cited more than 26,500 times (citation h factor = 89, Google Scholar). In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit Award, which is the society’s highest individual technical honor. He serves as Senior Editor, Radiation Effects, IEEE Transactions on Nuclear Science, Vice-Chair, Publications, IEEE NPSS Radiation Effects Committee, and Distinguished Lecturers Chair, IEEE NPSS. In 1997 Dan received R&D 100 and Industry Week Magazine awards for co-invention of a new type of computer memory chip based on mobile protons in SiO2. This chip was also recognized as Discover Magazine’s 1998 Invention of the Year in computer hardware and electronics. Dan is a Fellow of the Institute for Electrical and Electronics Engineers, The American Physical Society, and the American Association for the Advancement of Science. He is a member of ASEE, Phi Beta Kappa, and Sigma Pi Sigma.


 Full CV_Fleetwood_2023


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