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ICCF GM:
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Dan is currently
competing in the 33rd
World Championship of the International Correspondence Chess Federation
(ICCF), start date Nov. 20, 2022. Dan was the 8th American to earn the
International Correspondence Chess GrandMaster title, played Board 1 for
the United States Correspondence Chess Olympics team in the 15th
Olympiad Final, Board 2 in the 20th and 21st Olympiad
Finals, and Board 3 in the 14th and 18th Olympiad
finals. He finished first in the Category 15 GER/Pirs10/A, 10 Jahre
Schachschule Pirs in Deutschland Gruppe A tournament and Category 13 ESP/MG1/A, I Magistral AEAC -
Grupo A tournament, and 8th in the 18th International
Correspondence Chess Championship.
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Research Group:
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Radiation Effects and Reliability
Group/Institute for Space and Defense Electronics at Vanderbilt University
This
is a recent review article on radiation effects, border traps, and 1/f
noise: https://ieeexplore.ieee.org/abstract/document/8984269.
The following review articles may also be of interest: Radiation
Effects in AlGaN/GaN HEMTs, Radiation Effects in
the Post-Moore World, and Citation Impact of the
Outstanding Conference Papers of the IEEE NSREC. Short articles from the
IEEE NPSS and IEEE EDS newsletters on the occasion of the 75th
anniversary of the invention of the transistor may also be of interest.
Links are here: NPSS EDS
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Research
Interests:
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Effects of ionizing radiation on microelectronic
devices & materials.
Origin(s) of 1/f noise in semiconductors,
semiconductor devices, and metals.
Defects, reliability, radiation response of SiC, GaN,
and other compound semiconductor devices
Radiation hardness assurance test methods.
Charge trapping in silicon dioxide, and interface-trap
generation.
Radiation effects modeling and simulation.
Novel microelectronic materials, including
silicon-on-insulator materials.
Electronics for high-radiation and
high-temperature environments.
Advanced microelectronic processing/characterization,
including ultrathin oxides & alternative dielectrics.
Thermally stimulated current methods to
profile defects in insulators.
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Education:
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Ph. D., Solid
State Physics, Purdue
University, May
1984
M. S., Experimental Physics, Purdue
University, August
1981
B. S., Physics and Applied Math, Purdue
University, May 1980
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Honors and Awards:
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IEEE Nuclear and Plasma Sciences Society, Merit Award, 2009
Purdue University, Distinguished Science
Alumnus, 2007
Discover Magazine (1998), R&D
Magazine R&D 100 (1997) and Industry Week Technology of Year
(1997) Awards, for co-invention of protonic nonvolatile field effect
transistor memory (patent issued 11/3/1998).
More
than 20 Outstanding/Meritorious Conference Paper Awards for IEEE
Conferences on Nuclear and Space Radiation Effects and Conferences on
Hardened Electronics and Radiation Technology.
Named Distinguished Member of
the Technical Staff, Sandia National Laboratories, 1990
Lark-Horovitz
Award, Purdue
University, 1984.
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Biographical Information
Daniel M. Fleetwood received
his B. S., M. S., and Ph. D. degrees in Physics from Purdue
University in 1980,
1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque,
New Mexico, in 1984, and was
named a Distinguished Member of the Technical Staff in the Radiation
Technology and Assurance Department in 1990. In 1999 he accepted a position
as Professor of Electrical Engineering at Vanderbilt
University in Nashville,
Tennessee. In 2000, he was also
named a Professor of Physics, in July 2001 he was appointed Associate Dean
for Research of the Vanderbilt School of Engineering, and from June 1, 2003,
through June 30, 2020, he was Chair of the Electrical Engineering and
Computer Science Department. Since 2009, he is appointed Landreth Chair of
Engineering. He is also appointed as a Graduate Faculty Scholar at the
University of Central Florida.
Dan is the author of more than
600 publications on radiation effects in microelectronics, low-frequency
noise, and defects in microelectronic devices and materials, 13 of which have
been recognized with Outstanding Paper Awards. These papers have been cited
more than 29,000 times (citation h factor = 93, Google Scholar).
In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit
Award, which is the society’s highest individual technical honor. He serves
as Senior Editor, Radiation Effects, IEEE Transactions on Nuclear Science,
Vice-Chair, Publications, IEEE NPSS Radiation Effects Committee, and
Distinguished Lecturers Chair, IEEE NPSS. In 1997 Dan received R&D 100
and Industry Week Magazine awards for co-invention of a new type of computer
memory chip based on mobile protons in SiO2. This chip was also
recognized as Discover Magazine’s 1998 Invention of the Year in computer
hardware and electronics. Dan is a Life Fellow of the Institute for
Electrical and Electronics Engineers and a Fellow of The American Physical
Society, the American Association for the Advancement of Science, and the
National Academy of Inventors. He is a member of ASEE, Phi Beta Kappa, and
Sigma Pi Sigma.
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