Radiation Effects Research Page:
Overview
Electronic components and systems in microelectronic circuits, when exposed
to the harsh radiation environments of space, may degrade or even fail due to
the effects of ionizing radiation. This is particularly important in reliability
studies and when trying to predict the survival of these systems in space.
The Radiation Effects and Reliability Group at Vanderbilt is working to
understand the performance of advanced integrated circuit systems in the space
environment. This group is the largest of its kind, both from the point of
view of size and research grants, in the United States and includes research
in all three effects of radiation viz. Single Event Effects, Dose Rate Effects
and Total Ionizing Dose Effects. The work in this group includes research
in three different levels of development in microelectronic systems - the
Process Level, the Device Level and the Circuit Level.
Topics
- Analysis of Single Event Phenomena in submicron CMOS complex combinational
circuitry
- Total Dose ionizing radiation effects on advanced CMOS and bipolar devices
and circuits
- Modeling of the Single Event collected charge and current pulse at the
device and circuit levels
- Low Dose Rate effects in solid-state devices and circuits (simulating
the natural space environment)
- Development of simulation tools to understand and predict Single Event
probabilities at the circuit level
- Application of computer simulation tools to radiation effects
- Characterization of devices and parameter extractions
- Measurement and analysis of ionizing radiation effects on interface traps
and carrier mobilities in solid-state devices
- Design and simulation of termination structures
- Heavy ion single-event burn-out and single-event gate rupture modeling
for MOSFET and bipolar power devices
- Test methods for predicting the survival of electronics in space
Faculty
Research Centers and Laboratories:
The Radiation Effects and
Reliability Group
Institute for Space and Defense Electronics
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